Tubo de efecto de campo MOSFET - Selección de tubo MOS - Solución de gestión de energía - Shanghai Leiditech Electronics Technology Co., Ltd.

MOSFET de doble canal N

LM3134KM6

  • PackageSOT-563
  • Vdss Min(V) Drain-Source voltage20
  • Drain Current ID(A)25℃0.75
  • Vgs(V)12
  • Vth Typ0.35~1.1
  • Ron(10V) (mΩ)Typ-
  • Ron(10V) (mΩ) Max-
  • Ron(4.5V) (mΩ)Typ270
  • Ron(4.5V) (mΩ)Max380
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    Características/aplicaciones Demostración de modelos similares Buscar materiales alternativos
    Características/aplicaciones
    FEATURE
    Surface Mount PackageN-Channel Switch with Low Ros(on) Operated at Low Logic Level Gate Drive
    APPLICATION
    Load/Power Switching
    Interfacing Switching
    Battery Management for Ultra Small Portable Electronics
     Logic Level Shift
    Demostración de modelos similares
    LM3134KM6 N+N Vdss= 20 V, ID(25℃)= 0.75 A, VGS= 12 V, VTH= 0.3..1.1 V, Ron(4.5V)Typ= 270 mΩ, Ron(4.5V)Max= 380 mΩ, SOT-563
    LM3541KM6 N+N Vdss= 30 V, ID(25℃)= 0.2 A, VGS= 20 V, VTH= 1.1 V, Ron(10V)Typ= 1600 mΩ, Ron(10V)Max= 2000 mΩ, SOT-563
    LM2T1ND06 N+N Vdss= 60 V, ID(25℃)= 0.35 A, VGS= 20 V, VTH= 0.5..1.25 V, Ron(10V)Typ= mΩ, Ron(10V)Max= 1400 mΩ, SOT-563
    BSS84AKV P+P Vdss= -50 V, ID(25℃)= -0.17 A, VGS= 20 V, VTH= 0.8..2.0 V, Ron(10V)Typ= 2000 mΩ, Ron(10V)Max= 6000 mΩ, SOT-563
    LM3439KM6 N+P Vdss= 20/-20 V, ID(25℃)= 0.75/-0.66 A, VGS= 12 V, VTH= 0.35..1.1/-0.35..-1.1 V, Ron(4.5V)Typ= 260/460 mΩ, Ron(4.5V)Max= 400/700 mΩ, SOT-563
    Buscar materiales alternativos

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